Intel announced creation of next generation memory
| "STATUS QUO", Kharkiv, 2011-12-07, 17:21 |
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"Intel" and "Micron Technology" announced the creation of the world's first 20-nanometer NAND-memory with multi-cell structure of 128 Gb. It was reported "SQ" at the press service of the "Intel" on December 7. The first monolithic module for 128 Gb allows creating a chip by the size of a nail with capacity of 1 Terabit, using only 8 crystals. On the basis of the new memory it will be created more efficient and cheaper SSDs for smart phones, pads and industrial storage systems. It is planned to start supplying test samples of 128 Gb modules in January, and mass production is expected for the first half of 2012.
"SQ" Reference. Corporation "Intel" is the world's leading manufacturer of semiconductor components. "Micron Technology, Inc." produces and sells NAND-, NOR-and DRAM-memory, other semiconductor components and memory modules for use in computers, consumer electronics, networking, embedded and mobile products.
